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Список видань за алфавітом назв: Авторський покажчик Покажчик назв публікацій  |
Пошуковий запит: (<.>A=Pashchenko G$<.>) | |||
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Загальна кількість знайдених документів : 3 Представлено документи з 1 до 3 |
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| 1. | 
Pashchenko G. A. Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing [Електронний ресурс] / G. A. Pashchenko, M. Yu. Kravetskyi, A. V. Fomin // Semiconductor physics quantum electronics & optoelectronics. - 2015. - Vol. 18, № 3. - С. 330-333. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_3_18 Used in this work is the stationary model of the process of chemical-and-dynamical polishing (CDP) the substrates in the case of balance between diffusion, convective and chemical fluxes. Obtained has been an analytical expression relating the surface shape in processed material with physical parameters of processes taking place under CDP. Calculations performed by the authors enabled to find technological regimes of processing that provides total removal of linear morphological defects from the surface of substrates after cutting. Comparison of experimental profilograms taken from the processed surfaces with theoretical dependences showed their satisfactory agreement. | ||
| 2. |
Fomin A. V. Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing [Електронний ресурс] / A. V. Fomin, G. A. Pashchenko, M. Yu. Kravetskyi, I. G. Lutsyshyn // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 1. - С. 118-122. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_1_19 Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process has been developed under assumption that the pure diffusion smoothing mechanism takes place there. It has been shown that satisfactory correspondence between respective calculated dependences and experimental results can be reached by introducing the "effective" diffusion coefficient providing account of etchant convection. | ||
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Pashchenko G. A. Features of electrochemical processes at the boundary p-GaAs-HF water solution [Електронний ресурс] / G. A. Pashchenko, M. Yu. Kravetskyi, L. I. Trishchuk // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 3. - С. 277-281. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_3_11 Investigated in this work have been polarization curves typical for the interface p-GaAs - HF water solution with the concentration of fluoric acid between 1 and 10 mass.%. The shape of these curves has been compared with that following from analytical expressions obtained with account of the general equation for electrochemical kinetics. This equation was considered for partial cases of electrode potential re-distribution between the Helmholtz layers and space charge region (SCR) in semiconductor. It has been found that the shape of polarization curves corresponds to the state when exchange reactions at the above boundary for the used HF concentrations take place mainly via the valence band with participation of holes, while the electrode potential re-distributes between semiconductor SCR and the Helmholtz layer. Determined also have been the ranges of current density where transfer of current carriers takes place through the boundary p-GaAs - HF water solution (electrochemical stage), exchange currents for cathode and anode biases, coefficient of charge carrier transfer under the cathode bias. | ||
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